A TECHNOLOGY FOR MONOLITHIC INTEGRATION OF HIGH-INDIUM-FRACTION RESONANT-TUNNELING DIODES WITH COMME - Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Confe
نویسندگان
چکیده
A novel epitaxy-on-electronics (EoE) technology, developed at MIT, allows the integration of 111-V heterostructures and commercial VLSI GaAs circuits. We have designed a monolithic resonant-tunneling diode(RTD) based static random access memory which uses this technique. We review both the EoE process and the design and epitaxial growth techniques for high performance In,Gal-,As/AIAs RTDs suitable for memories. HIGH-INDIUM-FRACTION RESONANT-TUNNELING DIODES WITH
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